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BD2270HFV Fiches technique(PDF) 1 Page - Rohm

No de pièce BD2270HFV
Description  Controller ICs for High Side NMOSFET
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BD2270HFV Fiches technique(HTML) 1 Page - Rohm

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2011.05 - Rev.B
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Power Management Switch ICs for PCs and Digital Consumer Products
Controller ICs
for High Side NMOSFET
BD2270HFV
Description
The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel
MOSFET drive without using any external parts.
In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up
sequence. The space saving type of HVSOF5 package is used.
Features
1)
Built-in charge pump
2)
Built-in discharge circuit for output charge
3)
Soft start circuit
4)
Built-in comparator with hysteresis function at control input terminal
5)
Compact HVSOF5 package
6)
Operating current 50μA
7)
Standby current 5μA
8)
Possible to drive N-channel power MOSFET
Applications
PCs, PC peripheral devices, digital consumer electronics, etc.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Supply voltage
VCC
-0.3 ~ 6.0
V
AEN voltage
VAEN
-0.3 ~ 6.0
V
DISC voltage
VDISC
-0.3 ~ 6.0
V
GATE voltage
VGATE
-0.3 ~ 15.0
V
Storage temperature range
TSTG
-55 ~ 150
°C
Power dissipation
Pd
669
*1
mW
*1 When mounted on a 70 mm
70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta25C
*2 This IC is not designed to be radiation-proof.
Operating Conditions
Parameter
Symbol
Ratings
Unit
Operating voltage range
VCC
2.7 ~ 5.5
V
Operating temperature range
TOPR
-25 ~ 85
°C
No.11029EBT01


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