BCX54TA datasheet(2/7 Pages) DIODES

No de pièce	BCX54TA

Description	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

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Fabricant	DIODES [Diodes Incorporated]

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2 / 7 page

BCX 54 / 55 / 56

Datasheet Number: DS35369 Rev. 2 – 2

2 of 7

www.diodes.com

June 2011

BCX 54 / 55 / 56

Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic

Symbol

BCX54

BCX55

BCX56

Unit

Collector-Base Voltage

VCBO

45

60

100

V

Collector-Emitter Voltage

VCEO

45

60

80

V

Emitter-Base Voltage

VEBO

5

V

Continuous Collector Current

IC

1

A

Peak Pulse Collector Current

ICM

1.5

Continuous Base Current

IB

100

mA

Peak Pulse Base Current

IBM

200

Thermal Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

PD

1

W

Thermal Resistance, Junction to Ambient (Note 4)

RθJA

124

°C/W

Thermal Resistance, Junction to Leads (Note 5)

RθJL

10.0

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Notes:

4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Thermal resistance from junction to solder-point (on the exposed collector pad).

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