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BF721T1G Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce BF721T1G
Description  PNP Silicon Transistor
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BF721T1G Fiches technique(HTML) 1 Page - ON Semiconductor

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 Semiconductor Components Industries, LLC, 2010
September, 2010 -- Rev. 9
1
Publication Order Number:
BF721T1/D
BF721T1G
PNP Silicon Transistor
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector -- Emitter Voltage
VCEO
--300
Vdc
Collector -- Base Voltage
VCBO
--300
Vdc
Collector -- Emitter Voltage
VCER
--300
Vdc
Emitter -- Base Voltage
VEBO
--5.0
Vdc
Collector Current
IC
--50
mAdc
Total Power Dissipation up to TA =25C
(Note 1)
PD
1.5
W
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction--to--Ambient (Note 1)
RθJA
83.3
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
SOT--223 (TO--261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
http://onsemi.com
AYW
DF G
G
BF721T1G
SOT--223
(Pb--Free)
1000 / Tape & Reel
A
= Assembly Location
Y
= Year
W
= Work Week
DF = Device Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
COLLECTOR 2,4
BASE
1
EMITTER 3
PNP SILICON TRANSISTOR
SURFACE MOUNT
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1


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