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STB1132 Fiches technique(PDF) 1 Page - KODENSHI_AUK CORP. |
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STB1132 Fiches technique(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 4 page KSD-T5B021-001 1 STB1132 PNP Silicon Transistor SOT-89 PIN Description • Medium power amplifier Features • PC(Collector power dissipation) =1W(Ceramic substate of 250 ㎟×0.8t used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664 Ordering Information Type NO. Marking Package Code STB1132 A1 YWW SOT-89 A1: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -32 V Emitter-Base voltage VEBO -5 V Collector current IC -1 A Collector power dissipation PC 0.5 W PC* 1 Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C * : When mounted on ceramic substrate(250 ㎟×0.8t) Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50 ㎂, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1 ㎃, IB=0 -32 - - V Emitter-Base breakdown voltage BVEBO IE=-50 ㎂, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 ㎂ Collector cut-off current ICES VCE=-30V, IC=0 - - -0.1 ㎂ Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 ㎂ DC current gain hFE * VCE=-3V, IC=-0.1A 100 - 320 - Collector-Emitter saturation voltage VCE(sat) IC=-500 ㎃, IB=-50 ㎃ - -0.2 -0.8 V Transition frequency fT VCE=-5V, IC=-50 ㎃, f=30 ㎒ - 150 - ㎒ Collector output capacitance Cob VCB=-10V, IE=0, f=1 ㎒ - 20 30 ㎊ * : hFE rank / O : 100 ~ 200, Y : 160 ~ 320 |
Numéro de pièce similaire - STB1132 |
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Description similaire - STB1132 |
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