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ST-1MLBR2 Datasheet(Fiches technique) 1 Page - KODENSHI KOREA CORP.

Numéro de pièce ST-1MLBR2
Description  Photo transistors
Télécharger  2 Pages
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Fabricant  KODENSHI [KODENSHI KOREA CORP.]
Site Internet  http://www.kodenshi.co.kr
Logo KODENSHI - KODENSHI KOREA CORP.

ST-1MLBR2 Datasheet(HTML) 1 Page - KODENSHI KOREA CORP.

  ST-1MLBR2 Datasheet HTML 1Page - KODENSHI KOREA CORP. ST-1MLBR2 Datenblatt HTML 2Page - KODENSHI KOREA CORP.  
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Photo transistors
KODENSHI KOREA CORP
The ST-1MLAR2 and 1MLBR2 is a high sensitivity
Dimensions
[Unit : mm]
NPN silicon phototransistor mounted in a TO-18
Type header with black epoxy encapsulation.
With daylight filter the phototransistor is sensitive
only to infrared rays.
Features
ㆍWide angular response
ㆍRelatively low-cost against metal can package
ㆍLow profile package
ㆍWith daylight filter
Applications
Remote control sensors
Card readers
Optical switches
Absolute Maximum Ratings
[TA = 25℃]
C-E Voltage
E-C Voltage
Collector current
Collector power dissipation
Operating temp
Storage temp
Soldering temp
*1
*1. For MAX.5 seconds at the position of 2mm from the package
Electro-Optical Characteristics
[TA = 25℃]
Spectral sensitivity
Peak wavelength
Half Angle
*2. Color temp = 2856K standard tungsten lamp
ICEO
VCEO=10V
-
λ
720 ~ 1,050
Collector dark current
Light current
C-E saturation voltage
Switching speeds
Rise time
Fall time
4
1
200
VCE(sat)
tr
IC=2mA, 2,000lx
*2
nA
IL
mA
VCE=10V, 200lx
*2
0.5
1.2
5.0
IC
mA
30
Parameter
PC
mW
Tsol
100
-25~+90
VECO
V
±70
-
10
-
Typ.
Max.
Topr.
λp
VCC=10V, IC=5mA
RL=100Ω
nm
940
μsec
--
degrees
ΔΘ
-
Unit.
Symbol
Conditions
Min.
260
-30~+100
Tstg.
ST-1MLAR2. ST-1MLBR2
VCEO
V
Symbol
Unit
40
Rating
Parameter
nm
tf
-
-8
-
V
μsec
-
0.2
0.4
- 1 -


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