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BC639ZL1G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BC639ZL1G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2011 February, 2011 − Rev. 1 1 Publication Order Number: BC637/D BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC637 BC639 VCEO 60 80 Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 12 mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. COLLECTOR 2 3 BASE 1 EMITTER http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 CASE 29 STYLE 14 x = 7 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAMS BC63 9−16 AYWW G G BC 63x AYWW G G |
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