BAW56TT1G datasheet(2/4 Pages) ONSEMI

No de pièce	BAW56TT1G

Description	Dual Switching Diode

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Fabricant	ONSEMI [ON Semiconductor]

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BAW56TT1G

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ELECTRICAL CHARACTERISTICS (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mAdc)

V(BR)

70

--

Vdc

Reverse Voltage Leakage Current

(VR =25 Vdc, TJ = 150C)

(VR =70 Vdc)

(VR =70 Vdc, TJ = 150C)

IR

--

30

2.5

50

mAdc

Diode Capacitance

(VR = 0,f= 1.0MHz)

CD

--

2.0

pF

Forward Voltage

(IF =1.0 mAdc)

(IF =10 mAdc)

(IF =60 mAdc)

(IF = 150 mAdc)

VF

--

715

855

1000

1250

mVdc

Reverse Recovery Time

(IF =IR =10 mAdc, RL = 100 Ω,IR(REC) = 1.0 mAdc) (Figure 1)

trr

--

6.0

ns

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF)of10mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp »trr

+10 V

2.0 k

820 Ω

0.1 mF

DUT

VR

100 mH

0.1 mF

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) =1.0 mA

OUTPUT PULSE

(IF =IR = 10 mA; MEASURED

at iR(REC) =1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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