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KTB2510 Datasheet(Fiches technique) 1 Page - KEC(Korea Electronics)

Numéro de pièce KTB2510
Description  EPITAXIAL PLANAR PNP TRANSISTOR
Télécharger  3 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB2510 Datasheet(HTML) 1 Page - KEC(Korea Electronics)

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2008. 4. 18
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB2510
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH POWER AMPLIFIER
DARLINGTON APPLICATION.
FEATURES
・Complementary to KTD1510
・Recommended for 60W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25
℃)
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
K
A
D
B
d
P
PT
M
Q
12
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E2.0
F
1.0
G
3.3 MAX
H9.0
I4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
Φ3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-10
A
Base Current
IB
-1
A
Collector Power Dissipation (Tc=25
℃)
PC
100
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
~150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-160V, IE=0
-
-
-100
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-100
μA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-30mA, IB=0
-150
-
-
V
DC Current Gain
hFE
VCE=-4V, IC=-7A
5000
12000
20000
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-7A, IB=-7mA
-
-
-2.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-7A, IB=-7mA
-
-
-3.0
V
Transition Frequency
fT
VCE=-12V, IC=-2A
-
50
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
230
-
pF
COLLECTOR
BASE
EMITTER
70
EQUIVALENT CIRCUIT


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