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KTB1424 Datasheet(Fiches technique) 1 Page - KEC(Korea Electronics)

Numéro de pièce KTB1424
Description  EPITAXIAL PLANAR PNP TRANSISTOR
Télécharger  1 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB1424 Datasheet(HTML) 1 Page - KEC(Korea Electronics)

  KTB1424_07 Datasheet HTML 1Page - KEC(Korea Electronics)  
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2007. 5. 21
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTB1424
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A)
Complementary to KTD2424.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
1
2
3
L
N
M
D
N
H
E
R
L
S
0.5 Typ
S
D
A
C
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Φ3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-10
V
Collector Current
IC
-3
A
Base Current
IB
-0.5
A
Collector Power Dissipation (Tc=25
)
PC
25
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-80V, IE=0
-
-
-20
A
Emitter Cut-off Current
IEBO
VEB=-10V, IC=0
-
-
-100
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA, IB=0
-60
-
-
V
DC Current Gain
hFE(1)
VCE=-2V, IC=-1A
3000
-
-
hFE(2)
VCE=-2V, IC=-3A
1000
-
-
Saturation Voltage
Collector-Emitter
VCE(sat)
IC=-3A, IB=-30mA
-
-
-1.5
V
Base-Emitter
VBE(sat)
IC=-3A, IB=-30mA
-
-
-2.8


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