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KTB1124 Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce KTB1124
Description  EPITAXIAL PLANAR PNP TRANSISTOR
Download  3 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB1124 Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

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2008. 3. 11
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SEMICONDUCTOR
TECHNICAL DATA
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : hFE (1) Classification A:100
200, B:140
280, C:200
400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Vollector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-3
A
Collector Current(Pulse)
ICP
-6
A
Base Current
IB
-600
mA
Collector Power Dissipation
PC
500
mW
PC*
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
ICBO
VCB=-40V, IE=0
-
-
-1
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-1
DC Current Gain
hFE(1) (Note)
VCE=-2V, IC=-100
100
-
400
hFE (2)
VCE=-2V, IC=-3A
35
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-2A, IB=-100
-
-0.35
-0.7
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-2A, IB=-100
-
-0.94
-1.2
V
Transition Frequency
fT
VCE=-10V, IC=-50
-
150
-
Collector Output Capacitance
Cob
VCB=-10V, f=1
-
39
-
Switching
Time
Turn-on Time
ton
-
70
-
nS
Storage Time
tstg
-
450
-
Fall Time
tf
-
35
-
* : Package mounted on ceramic substrate(250mm
2
0.8t)


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