KRA120 datasheet(1/7 Pages) KEC

No de pièce	KRA120

Description	EPITAXIAL PLANAR PNP TRANSISTOR

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Fabricant	KEC [KEC(Korea Electronics)]

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2011. 6. 14

1/7

SEMICONDUCTOR

TECHNICAL DATA

KRA116~KRA122

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 1

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

FEATURES

・With Built-in Bias Resistors.

・Simplify Circuit Design.

・Reduce a Quantity of Parts and Manufacturing Process.

1. EMITTER

2. COLLECTOR

3. BASE

TO-92

DIM MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2 3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

+_

MAXIMUM RATING (Ta=25

℃)

EQUIVALENT CIRCUIT

BIAS RESISTOR VALUES

R1

R2

COMMON(+)

OUT

IN

TYPE NO.

R1(k

Ω)

R2(k

Ω)

KRA116

1

10

KRA117

2.2

KRA118

2.2

10

KRA119

4.7

10

KRA120

10

4.7

KRA121

47

10

KRA122

100

CHARACTERISTIC

SYMBOL

RATING

UNIT

Output Voltage

KRA116

～122

VO

-50

V

Input Voltage

KRA116

VI

-10, 5

V

KRA117

-12, 10

KRA118

-12, 5

KRA119

-20, 7

KRA120

-30, 10

KRA121

-40, 15

KRA122

-40, 10

Output Current

KRA116

～122

IO

-100

mA

Power Dissipation

PD

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Numéro de pièce similaire - KRA120

Fabricant	No de pièce	Fiches technique	Description
KEC(Korea Electronics)	KRA120	77Kb / 7P	EPITAXIAL PLANAR PNP TRANSISTOR
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KRA120 Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

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