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KF1N60I Fiches technique(PDF) 1 Page - KEC(Korea Electronics) |
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KF1N60I Fiches technique(HTML) 1 Page - KEC(Korea Electronics) |
1 / 6 page 2010. 9. 27 1/6 SEMICONDUCTOR TECHNICAL DATA KF1N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES ・VDSS= 600V, ID= 1A ・RDS(ON)=10Ω(Max) @VGS = 10V ・Qg(typ) = 4.0nC ・EAS=45mJ MAXIMUM RATING (Tc=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 1.0 A @TC=100℃ 0.63 Pulsed (Note1) IDP 2.0 Single Pulsed Avalanche Energy (Note 2) EAS 45 mJ Repetitive Avalanche Energy (Note 1) EAR 2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 ℃ PD 28 W Derate above 25 ℃ 0.22 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 4.5 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 110 ℃/W G D S PIN CONNECTION 1. GATE 2. DRAIN 3. SOURCE DPAK (1) DIM MILLIMETERS A A B B C C D D F FF H G K G J L K L M 0.96 MAX 0.90 MAX E E M N H 0.70 MIN N 12 3 6.60 0.20 +_ 6.10 0.20 +_ 5.34 0.30 +_ 0.70 0.20 +_ 2.70 0.15 +_ 2.30 0.10 +_ 1.80 0.20 +_ 0.50 0.10 +_ 2.30 0.10 +_ 0.50 0.10 +_ J IPAK(1) 123 A A B C C D E F FF G G H H J J L L 0.96 MAX K M P M N P N 6.6 0.2 +_ 6.1 0.2 +_ 5.34 0.3 +_ 0.7 0.2 +_ 9.3 0.3 +_ 2.3 0.2 +_ 0.76 0.1 +_ 2.3 0.1 +_ 0.5 0.1 +_ 1.8 0.2 +_ 0.5 0.1 +_ 1.0 0.1 +_ +_ 1.02 0.3 DIM MILLIMETERS 1. GATE 2. DRAIN 3. SOURCE (KF1N60D/I) KF1N60D KF1N60I |
Numéro de pièce similaire - KF1N60I |
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Description similaire - KF1N60I |
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