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BCX19 Datasheet(Fiches technique) 1 Page - KEC(Korea Electronics)

Numéro de pièce BCX19
Description  EPITAXIAL PLANAR NPN TRANSISTOR
Télécharger  1 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

BCX19 Datasheet(HTML) 1 Page - KEC(Korea Electronics)

  BCX19 Datasheet HTML 1Page - KEC(Korea Electronics)  
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1999. 11. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
BCX19
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
Super Mini Packaged Transistors for Hybrid Circuits.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
E
1
2
3
B
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, IB=0
45
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CES
IC=10 A, VBE=0
50
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=10 A, IC=0
5.0
-
-
V
Collector Cut-off Current
ICBO
VCB=20V, IE=0
-
-
100
nA
Ta=150
, VCB=20V, IE=0
-
-
5.0
A
DC Current Gain
hFE
VCE=1V, IC=100mA
100
-
600
VCE=1V, IC=300mA
70
-
-
VCE=1V, IC=500mA
40
-
-
Base-Emitter Voltage
VBE(ON)
VCE=1V, IC=500mA
-
-
1.2
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
-
-
0.62
V
Transition Frequency
fT
IC=10mA, VCE=5V, f=100MHz
-
200
-
MHz
Collector Output Capacitance
Cob
VCB=10V, f=1MHz
-
6.0
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCEO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Emitter Current
IE
-500
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-65
150
Type Name
Marking
Lot No.
U1


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