BC337 datasheet(1/2 Pages) KEC

No de pièce	BC337

Description	EPITAXIAL PLANAR NPN TRANSISTOR

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Fabricant	KEC [KEC(Korea Electronics)]

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2000. 2. 28

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SEMICONDUCTOR

TECHNICAL DATA

BC337

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

High Current : IC=800mA.

DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).

For Complementary with PNP type BC327.

MAXIMUM RATING (Ta=25

)

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2

3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. COLLECTOR

2. BASE

3. EMITTER

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

800

mA

Emitter Current

IE

-800

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=45V, IE=0

-

100

nA

DC Current Gain (Note)

hFE

VCE=1V, IC=100mA

100

-

630

Collector-Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=50mA

-

0.7

V

Base-Emitter Voltage

VBE(ON)

VCE=1V, IC=300mA

-

1.2

V

Transition Frequency

fT

VCE=5V, IC=10mA, f=100MHz

-

100

-

MHz

Collector Output Capacitance

Cob

VCB=10V, f=1MHz, IE=0

-

16

-

pF

Note : hFE Classification none:100 630,

16:100

250,

25:160

400,

40:250

630

Numéro de pièce similaire - BC337

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	BC337	163Kb / 4P	Amplifier Transistor
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KEC(Korea Electronics)	BC337	31Kb / 1P	TO-92 PACKAGE
NXP Semiconductors	BC337	47Kb / 8P	NPN general purpose transistor 1999 Apr 15

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