Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

SML50B26 Fiches technique(PDF) 1 Page - Seme LAB

No de pièce SML50B26
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML50B26 Fiches technique(HTML) 1 Page - Seme LAB

  SML50B26 Datasheet HTML 1Page - Seme LAB SML50B26 Datasheet HTML 2Page - Seme LAB  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
SML50B26
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VDSS
ID
IDM
VGS
VGSM
PD
TJ , TSTG
TL
IAR
EAR
EAS
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
TO–247AD Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
26
104
±20
±30
300
2.4
–55 to 150
300
26
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 3.85mH, RG = 25W, Peak IL = 26A
VDSS
500V
ID(cont)
26A
RDS(on) 0.200W
W
W
W
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–247 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G


Html Pages

1  2 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn