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IRF044SMD Datasheet(Fiches technique) 2 Page - Seme LAB

Numéro de pièce IRF044SMD
Description  N-CHANNEL POWER MOSFET
Télécharger  2 Pages
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Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRF044SMD Datasheet(HTML) 2 Page - Seme LAB

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IRF044SMD
Prelim. 7/00
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 21A
VGS = 10V
ID = 34A
VDS = VGS
ID = 250mA
VDS ³ 15V
IDS = 21A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 34A
VDS = 0.5BVDSS
ID = 34A
VDS = 0.5BVDSS
VDD = 30V
ID = 34A
RG = 9.1W
IS = 34A
TJ = 25°C
VGS = 0
IF = 34A
TJ = 25°C
di / dt £ 100A/msVDD £ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
60
0.68
0.040
0.050
24
17
25
250
100
–100
2400
1100
230
39
88
6.7
15
18
52
23
130
81
79
34
136
2.5
220
1.6
Negligible
0.8
2.8
V
V/°C
W
V
S(
W
mA
nA
pF
nC
nC
ns
A
V
ns
mC
nH
BVDSS
DBVDSS
DTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£ 300ms, d£ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS


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