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IRF044 Datasheet(Fiches technique) 2 Page - Seme LAB

Numéro de pièce IRF044
Description  N-CHANNEL POWER MOSFET
Télécharger  2 Pages
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Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRF044 Datasheet(HTML) 2 Page - Seme LAB

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IRF044
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
0.68
0.028
0.032
24
17
25
250
100
–100
2400
1100
230
39
88
6.7
15
18
52
23
130
81
79
44
176
2.5
220
1.6
Negligible
5.0
13
1.0
0.12
30
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 27A
VGS = 10V
ID = 44A
VDS = VGS
ID = 250mA
VDS ≥ 15V
IDS = 27A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 44A
VDS = 0.5BVDSS
VDD = 30V
ID = 44A
RG = 9.1Ω
IS = 44A
TJ = 25°C
VGS = 0
IF = 44A
TJ = 25°C
di / dt ≤ 100A/µsVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge 1
Forward Turn–On Time
V
V/°C
V
S (É)
µA
nA
pF
nC
ns
A
V
ns
µC
nH
°C/W
BVDSS
∆BV
DSS
∆T
J
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
RθJC
RθCS
RθJA
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300ms, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS


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