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TPS62060DSGR Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce TPS62060DSGR
Description  3-MHz 1.6A Step Down Converter in 2x2 SON Package
Download  26 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPS62060DSGR Fiches technique(HTML) 3 Page - Texas Instruments

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TPS62061, TPS62063
TPS62060
www.ti.com
SLVSA95A
– MARCH 2010 – REVISED JANUARY 2011
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
AVIN ,
Supply voltage
2.7
6
V
PVIN
Output current capability
1600
mA
Output voltage range for adjustable voltage
0.8
VIN
V
L
Effective Inductance Range
0.7
1.0
1.6
µH
COUT
Effective Output Capacitance Range
4.5
10
22
µF
TA
Operating ambient temperature(1)
–40
85
°C
TJ
Operating junction temperature
–40
125
°C
(1)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the
part/package in the application (
θJA), as given by the following equation: TA(max)= TJ(max)–(θJA X PD(max))
ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply
for condition VIN = EN = 3.6V. External components CIN = 10μF 0603, COUT = 10μF 0603, L = 1.0μH, see the parameter
measurement information.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VIN
Input voltage range
2.7
6
V
IOUT = 0 mA, device operating in PFM mode
IQ
Operating quiescent current
18
25
μA
and not device not switching
ISD
Shutdown current
EN = GND, current into AVIN and PVIN
0.1
1
μA
Falling
1.73
1.78
1.83
VUVLO
Undervoltage lockout threshold
V
Rising
1.9
1.95
1.99
ENABLE, MODE
VIH
High level input voltage
2.7 V
≤ VIN ≤ 6 V
1.0
6
V
VIL
Low level input voltage
2.7 V
≤ VIN ≤ 6 V
0
0.4
V
IIN
Input bias current
Pin tied to GND or VIN
0.01
1
μA
POWER SWITCH
VIN = 3.6 V
(1)
120
180
RDS(on)
High-side MOSFET on-resistance
m
VIN = 5.0 V
(1)
95
150
VIN = 3.6 V
(1)
90
130
RDS(on)
Low-side MOSFET on-resistance
m
Ω
VIN = 5.0 V
(1)
75
100
Forward current limit MOSFET
ILIMF
2.7V
≤ VIN ≤ 6 V
1800
2250
2700
mA
high-side and low-side
Thermal shutdown
Increasing junction temperature
150
TSD
°C
Thermal shutdown hysteresis
Decreasing junction temperature
10
OSCILLATOR
fSW
Oscillator frequency
2.7 V
≤ VIN ≤ 6 V
2.6
3
3.4
MHz
(1)
Maximum value applies for TJ = 85°C
Copyright
© 2010–2011, Texas Instruments Incorporated
3


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