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TPS62060DSGR Fiches technique(PDF) 3 Page - Texas Instruments |
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TPS62060DSGR Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 26 page TPS62061, TPS62063 TPS62060 www.ti.com SLVSA95A – MARCH 2010 – REVISED JANUARY 2011 RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT AVIN , Supply voltage 2.7 6 V PVIN Output current capability 1600 mA Output voltage range for adjustable voltage 0.8 VIN V L Effective Inductance Range 0.7 1.0 1.6 µH COUT Effective Output Capacitance Range 4.5 10 22 µF TA Operating ambient temperature(1) –40 85 °C TJ Operating junction temperature –40 125 °C (1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application ( θJA), as given by the following equation: TA(max)= TJ(max)–(θJA X PD(max)) ELECTRICAL CHARACTERISTICS Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6V. External components CIN = 10μF 0603, COUT = 10μF 0603, L = 1.0μH, see the parameter measurement information. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage range 2.7 6 V IOUT = 0 mA, device operating in PFM mode IQ Operating quiescent current 18 25 μA and not device not switching ISD Shutdown current EN = GND, current into AVIN and PVIN 0.1 1 μA Falling 1.73 1.78 1.83 VUVLO Undervoltage lockout threshold V Rising 1.9 1.95 1.99 ENABLE, MODE VIH High level input voltage 2.7 V ≤ VIN ≤ 6 V 1.0 6 V VIL Low level input voltage 2.7 V ≤ VIN ≤ 6 V 0 0.4 V IIN Input bias current Pin tied to GND or VIN 0.01 1 μA POWER SWITCH VIN = 3.6 V (1) 120 180 RDS(on) High-side MOSFET on-resistance m Ω VIN = 5.0 V (1) 95 150 VIN = 3.6 V (1) 90 130 RDS(on) Low-side MOSFET on-resistance m Ω VIN = 5.0 V (1) 75 100 Forward current limit MOSFET ILIMF 2.7V ≤ VIN ≤ 6 V 1800 2250 2700 mA high-side and low-side Thermal shutdown Increasing junction temperature 150 TSD °C Thermal shutdown hysteresis Decreasing junction temperature 10 OSCILLATOR fSW Oscillator frequency 2.7 V ≤ VIN ≤ 6 V 2.6 3 3.4 MHz (1) Maximum value applies for TJ = 85°C Copyright © 2010–2011, Texas Instruments Incorporated 3 |
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