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BCX19 Datasheet(Fiches technique) 1 Page - SeCoS Halbleitertechnologie GmbH

Numéro de pièce BCX19
Description  Plastic-Encapsulate Transistor
Télécharger  1 Pages
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Fabricant  SECOS [SeCoS Halbleitertechnologie GmbH]
Site Internet  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BCX19 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  BCX19 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
BCX19
NPN Silicon
Plastic-Encapsulate Transistor
Power dissipation
Collector Current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 50 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150OC
PCM : 0.225 W (Tamb=25OC)
n
n
n
n
RoHS Compliant Product
n
SOT-23
FEATURES
Collector
3
1
Base
2
Emitter
http://www.SeCoSGmbH.com
Elektronische Bauelemente
1
2
3
ELECTRICAL CHARACTERISTICS(Tamb=25 C unless o
o
therwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 10
µA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic =10 mA, IB=0
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10
µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=20V, IB=0
0.1
µA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
10
µA
DC current gain
hFE
VCE=1V, IC=100mA
600
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB= 50mA
0.62
V
Base-emitter saturation voltage
VBE(on
IC=500mA,VCE=1V
1.2
V
)
45
100
MARKING
BCX19 = U1
01-Jun-2002 Rev. A
Page 1 of 1
1. 3
2. 4
Unit: millimeter
A suffix of "-C" specifies halogen & lead-free


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