BCP69 datasheet(1/2 Pages) SECOS

No de pièce	BCP69

Description	Silicon Epitaxial Transistor

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

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BC

P69

P

NP Transistor

Silicon Epitaxial Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

The BCP69 is designed for guse in

low voltage and medium power

applications.

Description

* VCEO : -20V

* IC : 1A

Features

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni Test Conditions

Collector-Base Breakdown Voltage

BVCBO

- 25

-

V

IC=-100µA, IE=0

IC=-1mA, IB=0

IE=-10µA, IC=0

VCB=- 25V, IE=0

VEB=-5V, IC=0

IC=-1mA, IB=-100mA

VCE=-1V, IC=-1A

VCE=-10V, IC=-5mA

VCE=-1V, IC=-500mA

VCE=-1V, IC=-1A

VCE=- 5V, IC=-10 mA

BVCEO

- 20

-

V

BVEBO

-5

-

V

ICBO

-

- 10

uA

IEBO

-

- 10

uA

*VCE(sat)1

-

- 500

mV

*VBE(on)

-

- 1.0

V

*hFE1

50

-

*hFE2

85

375

*hFE3

60

-

fT

-

60

-

MH

-

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector Saturation Voltage

Base-Emitter Voltage

DC Current Gain

Gain-Bandwidth Product

C

-

MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified)

C

o

Symbol

Parameter

Value

Collector Current

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

-5

1.5

V

A

W

Storage Temperature

-65~-150

C

O

VCEO

Collector-Emitter Voltage

- 20

V

VCBO

Collector-Base Voltage

- 25

V

Units

-1

SOT-223

01-Jun-2002 Rev. A

Page 1 of 2

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

BCP69

DateCode

B

C

E

o

*Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Millimeter

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