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BAV99DW Fiches technique(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BAV99DW Fiches technique(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page Any changing of specification will not be informed individual BAV99DW Dual Series Chips Surface Mount Switching Diode 100 0.2 0.4 VF, Forward Voltage (V) 0.6 0.8 1.0 1.2 10 1.0 0.1 TA = 85°C 10 0 VR, Reverse Voltage (V) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 VR, Reverse Voltage (V) 0.64 0.60 0.56 0.52 24 6 8 Figure 2. Forward Voltage Figure 3. Leakage Current Figure 4. Capacitance TA = – 40°C TA = 25°C TA = 150°C TA = 125°C TA = 85°C TA = 55°C TA = 25°C Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2.0 k 820 Ω 0.1 µF DUT VR 100 µH 0.1 µF 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes tr tp t 10% 90% IF IR trr t IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF Input Signal Figure 1. Recovery Time Equivalent Test Circuit http://www.SeCoSGmbH.com Elektronische Bauelemente 01-J an-2006 Rev. B Page 2 of 2 |
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