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2N2907ADCSM Fiches technique(PDF) 2 Page - Seme LAB

No de pièce 2N2907ADCSM
Description  DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

2N2907ADCSM Fiches technique(HTML) 2 Page - Seme LAB

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Parameter
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
Prelim. 3/00
2N2907ADCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VCC = 30V
IC = 150mA
IB1 = 15mA
VCC = 6V
IC = 150mA
IB1 = IB2 = 15mA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS PER SIDE (T
C = 25°C unless otherwise stated)
IC = 10mA
IC = 10mA
IE = 10mAIC = 0
VCE = 30V
VBE = 0.5V
IE = 0
VCB = 50V
TC = 125°C
VCE = 30V
VBE = 0.5V
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 0.1mA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 500mA
VCE = 10V
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICEX*
Collector Cut-off Current
ICBO*
Collector – Base Cut-off Current
IBEO
Base Cut-off Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
–60
–60
–5
50
0.01
10
50
–0.4
–1.6
–1.3
–2.6
75
100
100
100
300
50
V
V
V
nA
mA
nA
V
V
fT
Transition Frequency
Cob
Output Capacitance
Cib
Input Capacitance
IC = 50mA
VCE = 20V
f = 100MHz
VCB = 10V
IE = 0
f = 1.0MHz
VBE = 2V
IC = 0
f = 1.0MHz
200
8
30
MHz
pF
pF
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
26
45
6.0
10
20
40
70
100
50
80
20
30
ns
ns
SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD)
(TC = 25°C unless otherwise stated)
* Pulse test tp = 300ms , d £ 2%
DYNAMIC CHARACTERISTICS PER SIDE (T
C = 25°C unless otherwise stated)


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
2N2907ACSM HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N2222ADCSM DUAL HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N2894ACSM HIGH SPEED MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N2894CSM HIGH SPEED MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N2222ACSM HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N2222ACSM4 HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N2369ACSM HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N930CSM HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N3209CSM HIGH SPEED PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
2N3700DCSM HIGH VOLTAGE MEDIUM POWER NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB

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