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2N2222ACSM4 Fiches technique(PDF) 2 Page - Seme LAB

No de pièce 2N2222ACSM4
Description  HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

2N2222ACSM4 Fiches technique(HTML) 2 Page - Seme LAB

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2N2222ACSM4
LAB
SEME
Prelim. 4/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 10mA
IC = 10µA
IE = 10µAIC = 0
IB = 0
VCE = 60V
IE = 0
VCB = 60V
TC = 125°C
IC = 0
VEB = 3V (off)
VCE = 60V
VEB = 3V (off)
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA
IC = 500mA
IC = 50mA
IC = 0.1mA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 150mA
VCE = 1V
IC = 500mA
VCE = 10V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICEX*
Collector Cut-off Current (IC = 0)
ICBO*
Collector – Base Cut-off Current
IEBO*
Emitter Cut-off Current (IC = 0)
IBL*
Base Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
TA = –55°C
40
75
6
10
10
10
10
20
0.3
1
0.6
1.2
2
35
50
75
35
100
300
50
40
V
V
V
nA
nA
µA
nA
nA
V
V
fT
Transition Frequency
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small Signal Current Gain
IC = 20mA
VCE = 20V
f = 100MHz
VCB = 10V
IE = 0
f = 1.0MHz
VBE = 0.5V
IC = 0
f = 1.0MHz
IC = 1mA
VCE = 10V
f = 1kHz
IC = 10mA
VCE = 10V
f = 1kHz
300
8
30
50
300
75
375
MHz
pF
pF
10
25
225
60
ns
ns
ns
ns
VCC = 30V
VBE = 0.5V (off)
IC1 = 150mA
IB1 = 15mA
VCC = 30V
IC = 150mA
IB1 = IB2 = 15mA
fT is defined as the frequency at which hFE extrapolates to unity.
* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
2N2222ACSM HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1  2  Seme LAB
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