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STK400-030 Fiches technique(PDF) 6 Page - Sanyo Semicon Device

No de pièce STK400-030
Description  AF Power Amplifier (Split Power Supply) (30 W 30 W min, THD = 0.4%)
Download  9 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

STK400-030 Fiches technique(HTML) 6 Page - Sanyo Semicon Device

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External Circuit Diagram
Heat Radiation Design Considerations
The radiator thermal resistance
θc-a required for total substrate power dissipation Pd in the STK401-050 is determined as:
Condition 1: IC substrate temperature Tc not to exceed 125°C.
Pd x
θc-a+Ta <125°C ······························· (1)
where Ta is set assured ambient temperature.
Condition 2: Power transistor junction temperature Tj not to exceed 150°C.
Pd x
θc-a+Pd/N x θj-c+Ta<150°C·············(2)
where N is the number of power transistors and
θj-c is the thermal resistance per power transistor chip.
However, power transistor power consumption is Pd equally divided by N units.
Expressions (1) and (2) can be rewritten based on
θc-a to yield:
θc-a<(125–Ta)/Pd ······································(1)'
θc-a<(150–Ta)/Pd–θj-c/N··························(2)'
The required radiator thermal resistance will satisfy both of these expressions.
From expressions (1)' and (2)', the required radiator thermal resistance can be determined once the following
specifications are known:
Supply voltage
VCC
Load resistance
RL
Assured ambient temperature
Ta
The total substrate power consumption when STK401-050 VCC is ±26 V and RL is 6 Ω, for a continuous sine wave
signal, is a maximum of 45.7W (Fig. 1). In general, when this sort of continuous signal is used for estimation of power
consumption, the Pd used is 1/10th of PO max (slight variation depending on safety standard).
Pd=27.7W (1/10 PO max=during 3W)
No. 4343-6/9
STK401-050


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