Si8244CB-C-IS1 datasheet(6/30 Pages) SILABS

No de pièce	Si8244CB-C-IS1

Description	CLASS D AUDIO DRIVER WITH PRECISION DEAD-TIME GENERATOR

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Fabricant	SILABS [Silicon Laboratories]

Site Internet	http://www.silabs.com

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Si824x

6

Rev. 0.2

VDDI Undervoltage Threshold

VDDIUV+

VDDI rising

3.60

4.0

4.45

V

VDDI Undervoltage Threshold

VDDIUV–

VDDI falling

3.30

3.70

4.15

V

VDDI Lockout Hysteresis

VDDIHYS

—250

—

mV

VDDA, VDDB Undervoltage

Threshold

VDDAUV+,

VDDBUV+

VDDA, VDDB rising

8V Threshold

See Figure 34 on page 21.

7.50

8.60

9.40

V

10 V Threshold

See Figure 35 on page 21.

9.60

11.1

12.2

V

VDDA, VDDB Undervoltage

Threshold

VDDAUV–,

VDDBUV–

VDDA, VDDB falling

8V Threshold

See Figure 34 on page 21.

7.20

8.10

8.70

V

10 V Threshold

See Figure 35 on page 21.

9.40

10.1

10.9

V

VDDA, VDDB

Lockout Hysteresis

VDDAHYS,

VDDBHYS

UVLO voltage = 8 V

—

600

—

mV

VDDA, VDDB

Lockout Hysteresis

VDDAHYS,

VDDBHYS

UVLO voltage = 10 V

—

1000

—

mV

AC Specifications

Minimum Pulse Width

—

10

—

ns

Propagation Delay

tPHL, tPLH

CL = 1 nF

—

25

60

ns

Pulse Width Distortion

|tPLH - tPHL|

PWD

—

1.0

5.60

ns

Programmed Dead Time2

DT

See Figures 36 and 37

0.4

—

1000

ns

Output Rise and Fall Time

tR,tF

CL = 1 nF (Si8241)

—

20

ns

CL = 1 nF (Si8244)

—

12

ns

Shutdown Time from

Disable True

tSD

——

60

ns

Restart Time from

Disable False

tRESTART

——

60

ns

Device Start-up Time

tSTART

Time from VDD_ = VDD_UV+

to VOA, VOB = VIA, VIB

—5

7

µs

Common Mode

Transient Immunity

CMTI

VIA, VIB, PWM = VDDI or 0 V

25

45

—

kV/µs

Table 1. Electrical Characteristics1 (Continued)

4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Notes:

1. VDDA = VDDB = 12 V for 8 V UVLO and 10 V UVLO devices.

2. The largest RDT resistor that can be used is 220 k

.

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