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Si8241BB-B-IS1 Fiches technique(PDF) 6 Page - Silicon Laboratories |
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Si8241BB-B-IS1 Fiches technique(HTML) 6 Page - Silicon Laboratories |
6 / 30 page Si824x 6 Rev. 0.2 VDDI Undervoltage Threshold VDDIUV+ VDDI rising 3.60 4.0 4.45 V VDDI Undervoltage Threshold VDDIUV– VDDI falling 3.30 3.70 4.15 V VDDI Lockout Hysteresis VDDIHYS —250 — mV VDDA, VDDB Undervoltage Threshold VDDAUV+, VDDBUV+ VDDA, VDDB rising 8V Threshold See Figure 34 on page 21. 7.50 8.60 9.40 V 10 V Threshold See Figure 35 on page 21. 9.60 11.1 12.2 V VDDA, VDDB Undervoltage Threshold VDDAUV–, VDDBUV– VDDA, VDDB falling 8V Threshold See Figure 34 on page 21. 7.20 8.10 8.70 V 10 V Threshold See Figure 35 on page 21. 9.40 10.1 10.9 V VDDA, VDDB Lockout Hysteresis VDDAHYS, VDDBHYS UVLO voltage = 8 V — 600 — mV VDDA, VDDB Lockout Hysteresis VDDAHYS, VDDBHYS UVLO voltage = 10 V — 1000 — mV AC Specifications Minimum Pulse Width — 10 — ns Propagation Delay tPHL, tPLH CL = 1 nF — 25 60 ns Pulse Width Distortion |tPLH - tPHL| PWD — 1.0 5.60 ns Programmed Dead Time2 DT See Figures 36 and 37 0.4 — 1000 ns Output Rise and Fall Time tR,tF CL = 1 nF (Si8241) — — 20 ns CL = 1 nF (Si8244) — — 12 ns Shutdown Time from Disable True tSD —— 60 ns Restart Time from Disable False tRESTART —— 60 ns Device Start-up Time tSTART Time from VDD_ = VDD_UV+ to VOA, VOB = VIA, VIB —5 7 µs Common Mode Transient Immunity CMTI VIA, VIB, PWM = VDDI or 0 V 25 45 — kV/µs Table 1. Electrical Characteristics1 (Continued) 4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C Parameter Symbol Test Conditions Min Typ Max Units Notes: 1. VDDA = VDDB = 12 V for 8 V UVLO and 10 V UVLO devices. 2. The largest RDT resistor that can be used is 220 k . |
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