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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BAP63-03 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAP63-03 Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2001 May 18 3 Philips Semiconductors Product specification Silicon PIN diode BAP63-03 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse leakage current VR =35V − 10 nA Cd diode capacitance VR = 0; f = 1 MHz 0.4 − pF VR = 1 V; f = 1 MHz 0.35 − pF VR = 20 V; f = 1 MHz 0.27 0.32 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 Ω IF = 1 mA; f = 100 MHz; note 1 1.95 3 Ω IF = 10 mA; f = 100 MHz; note 1 1.17 1.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.9 1.5 Ω |s 21| 2 isolation VR = 0; f = 900 MHz 15.4 − dB VR = 0; f = 1800 MHz 10.1 − dB VR = 0; f = 2450 MHz 7.8 − dB |s 21| 2 insertion loss IF = 0.5 mA; f = 900 MHz 0.21 − dB IF = 0.5 mA; f = 1800 MHz 0.28 − dB IF = 0.5 mA; f = 2450 MHz 0.38 − dB |s 21| 2 insertion loss IF = 1 mA; f = 900 MHz 0.18 − dB IF = 1 mA; f = 1800 MHz 0.26 − dB IF = 1 mA; f = 2450 MHz 0.35 − dB |s 21| 2 insertion loss IF = 10 mA; f = 900 MHz 0.13 − dB IF = 10 mA; f = 1800 MHz 0.20 − dB IF = 10 mA; f = 2450 MHz 0.30 − dB |s 21| 2 insertion loss IF = 100 mA; f = 900 MHz 0.10 − dB IF = 100 mA; f = 1800 MHz 0.18 − dB IF = 100 mA; f = 2450 MHz 0.28 − dB τ L charge carrier life time when switched from IF =10mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA 310 − ns LS series inductance 1.5 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 120 K/W |
Numéro de pièce similaire - BAP63-03_00 |
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Description similaire - BAP63-03_00 |
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