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JCS7N65F-O-F-N-B Fiches technique(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

No de pièce JCS7N65F-O-F-N-B
Description  N-CHANNEL MOSFET
Download  8 Pages
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Fabricant  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Site Internet  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS7N65F-O-F-N-B Fiches technique(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  JCS7N65F-O-F-N-B Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 6Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 7Page - JILIN SINO-MICROELECTRONICS CO., LTD. JCS7N65F-O-F-N-B Datasheet HTML 8Page - JILIN SINO-MICROELECTRONICS CO., LTD.  
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R
JCS7N65F
版本:201004A
4/8
电特性
ELECTRICAL CHARACTERISTICS
开关特性
Switching Characteristics
延迟时间
Turn-On delay time
td(on)
-
30
70
ns
上升时间
Turn-On rise time
tr
-
80 170
ns
延迟时间
Turn-Off delay time
td(off)
-
125 260
ns
下降时间
Turn-Off Fall time
tf
VDD=300V,ID=7A,RG=25Ω
note 4,5)
-
85 180
ns
栅极电荷总量
Total Gate Charge
Qg
-
54
65
nC
栅-源电荷
Gate-Source charge
Qgs
-
6.8
-
nC
栅-漏电荷
Gate-Drain charge
Qgd
VDS =480V ,
ID=7A
VGS =10V
note 4,5)
-
23
-
nC
漏-源二极管特性及最大额定值
Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
7.0
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
28
A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=7.0A
-
-
1.4
V
反向恢复时间
Reverse recovery time
trr
-
415
-
ns
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V, IS=7.0A
dIF/dt=100A/μs
(note 4)
-
4.6
-
μC
热特性
THERMAL CHARACTERISTIC
最大
Max
Parameter
Symbol
JCS7N65F
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.6
/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
/W
注释:
1:脉冲宽度由最高结温限制
2:L=15.7mH, IAS=7.0A, VDD=50V, RG=25 Ω,起始
结温
TJ=25℃
3:ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1 : Pulse width limited by maximum junction
temperature
2:L=15.7mH, IAS=7.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature


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