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JCS7N65F-O-F-N-B Fiches technique(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

No de pièce JCS7N65F-O-F-N-B
Description  N-CHANNEL MOSFET
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Fabricant  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Site Internet  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS7N65F-O-F-N-B Fiches technique(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS7N65F
版本:201004A
3/8
电特性
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
测试条件
Tests conditions
最小
Min
典型
Typ
最大
Max
单位
Units
关态特性
Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
650
-
-
V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS
TJ
ID=250μA,
referenced
to
25℃
-
0.65
-
V/℃
VDS=650V,VGS=0V, TC=25℃
-
-
10
μA
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
VDS=520V,
TC=125℃
-
-
100
μA
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
-
-
-100
nA
通态特性
On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=3.5A
-
1.15 1.35
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=3.5A(note 4) -
8.2
-
S
动态特性
Dynamic Characteristics
输入电容
Input capacitance
Ciss
-
1380 1800
pF
输出电容
Output capacitance
Coss
-
115
150
pF
反向传输电容
Reverse transfer capacitance
Crss
VDS=25V,
VGS =0V,
f=1.0MHZ
-
23
30
pF


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