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LC78620E Fiches technique(PDF) 3 Page - Sanyo Semicon Device |
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LC78620E Fiches technique(HTML) 3 Page - Sanyo Semicon Device |
3 / 34 page Specifications Absolute Maximum Ratings at Ta = 25°C, VSS = 0 V Allowable Operating Ranges at Ta = 25°C, VSS = 0 V Note: Due to the structure of this LSI, an identical voltage must be supplied to all the power supply pins. Electrical Characteristics at Ta = 25°C, VDD = 5 V, VSS = 0 V No. 5130-3/34 LC78620E Parameter Symbol Conditions Ratings Unit Maximum supply voltage VDD max VSS – 0.3 to VSS + 7.0 V Maximum input voltage VIN max VSS – 0.3 to VDD + 0.3 V Maximum output voltage VOUT max VSS – 0.3 to VDD + 0.3 V Allowable power dissipation Pd max 300 mW Operating temperature Topr –20 to +75 °C Storage temperature Tstg –40 to +125 °C Parameter Symbol Conditions min typ max Unit Supply voltage VDD VDD, XVDD, LVDD, RVDD, VVDD 4.5 5.5 V DEFI, FZD, ASDACK, ASDFIN, ASDFIR, ASLRCK, Input high level voltage VIH (1) COIN, RES, HFL, TES, SBCK, RWC, CQCK, TAI, 0.7 VDD VDD V TEST1 to TEST5, DEMO, CS VIH (2) EFMIN 0.6 VDD VDD V DEFI, FZD, ASDACK, ASDFIN, ASDFIR, ASLRCK, Input low level voltage VIL (1) COIN, RES, HFL, TES, SBCK, RWC, CQCK, TAI, 0 0.3 VDD V TEST1 to TEST5, DEMO, CS VIL (2) EFMIN 0 0.4 VDD V Data setup time tset up COIN, RWC: Figure 1 400 ns Data hold time thold COIN, RWC: Figure 1 400 ns High level clock pulse width tWøH SBCK, CQCK: Figures 1, 2 and 3 400 ns Low level clock pulse width tWøL SBCK, CQCK: Figures 1, 2 and 3 400 ns Data read access time tRAC SQOUT, PW: Figures 2 and 3 0 400 ns Command transfer time tRWC RWC: Figure 1 1000 ns Subcode Q read enable time tSQE WRQ: Figure 2, with no RWC signal 11.2 ms Subcode read cycle time tsc SFSY: Figure 3 136 µs Subcode read enable time tse SFSY: Figure 3 400 ns Input level VIN (1) EFMIN 1.0 Vp-p VIN (2) XIN: Input capacitor coupled 1.0 Vp-p Operating frequency range fop EFMIN 10 MHz Crystal oscillator frequency fX (1) XIN, XOUT: In 16M mode 16.9344 MHz fX (2) XIN, XOUT: In 32M mode 33.8688 MHz Parameter Symbol Conditions min typ max Unit Current drain IDD 30 45 mA DEFI, EFMIN, FZD, ASDACK, ASDFIN, ASDFIR, Input high level current IIH (1) ASLRCK, COIN, RES, HFL, TES, SBCK, RWC, 5 µA CQCK: VIN = 5 V IIH (2) TAI, TEST1 to TEST5, DEMO, CS: VIN = VDD = 5.5 V 25 75 µA DEFI, EFMIN, FZD, ASDACK, ASDFIN, ASDFIR, Input low level current IIL ASLRCK, COIN, RES, HFL, TES, SBCK, RWC, –5 µA CQCK, TAI, TEST1 to TEST5, DEMO, CS: VIN = 0 V EFMO, EFMO, CLV+, CLV–, V/P, FOCS, PCK, FSEQ, VOH (1) TOFF, TGL, THLD, JP+, JP–, EMPH, EFLG, FSX: 4 V IOH = –1 mA MUTEL, MUTER, LRCKO, DFORO, DFOLO, DACKO, VOH (2) TST10, LRSY, CK2, ROMXA, C2F, SBSY, PW, SFSY, 4 V Output high level voltage WRQ, SQOUT, TST11, 16M, 4.2M, CONT: IOH = –0.5 mA VOH (3) LASER: IOH = –1 mA 4.6 V VOH (4) DOUT: IOH = –12 mA 4.5 V VOH (5) LCHP, RCHP, LCHN, RCHN: IOH = –1mA 3.0 4.5 V Continued on next page. |
Numéro de pièce similaire - LC78620E |
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Description similaire - LC78620E |
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