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2N3251AUB Fiches technique(PDF) 1 Page - Microsemi Corporation |
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2N3251AUB Fiches technique(HTML) 1 Page - Microsemi Corporation |
1 / 4 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 T4-LDS-0093 Rev. 2 (101243) Page 1 of 4 DEVICES LEVELS 2N3250A 2N3251A JAN 2N3250AUB 2N3251AUB JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 200 mAdc Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (1) PT 0.36 1.2 W Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Case RθJC (1) 150 °C/W Note: 1/ Consult 19500/323 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 60 Vdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc VBE = 3.0Vdc, VCE = 40Vdc TA = 150°C ICEX 20 20 ηAdc μAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 40Vdc ICBO 10 20 μAdc ηAdc Emitter-Base Cutoff Current VEB = 5.0Vdc IEBO 10 μAdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc IBEX 50 ηAdc TO-39 (TO-205AD) UB Package |
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Description similaire - 2N3251AUB |
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