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2N5015 Fiches technique(PDF) 3 Page - Microsemi Corporation |
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2N5015 Fiches technique(HTML) 3 Page - Microsemi Corporation |
3 / 4 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com T4-LDS-0067 Rev. 2 (100293) Page 3 of 4 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.) Parameters / Test Conditions Symbol Min. Max. Unit Base-Emitter Saturation Voltage IC = 25mA IC = 20mA IB = 5mA, Pulsed 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 VBE(SAT) 1.0 1.0 Vdc Vdc Collector-Emitter Saturation Voltage IC = 25mA IC = 25mA IC = 25mA IC = 20mA IC = 20mA IC = 20mA IB = 5mA, Pulsed 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 VCE(SAT) 1.4 1.5 1.6 1.6 1.6 1.8 Vdc Vdc Vdc Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of small signal short-circuit forward current transfer ratio VCE = 10Vdc, IC = 25mA, f = 10MHz VCE = 10Vdc, IC = 20mA, f = 10MHz 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 |hfe| 1.0 1.0 Open circuit output capacitance VCB = 10V, IE = 0, f = 2MHz Cobo 30 pF |
Numéro de pièce similaire - 2N5015 |
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Description similaire - 2N5015 |
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