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2SD1222 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SD1222
Description  Switching Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1222 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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2SD1222
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
20
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
2.5
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 25 mA, IB = 0
40
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
DC current gain
hFE (2)
VCE = 2 V, IC = 3 A
1000
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 4 mA
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 2 A, IB = 4 mA
2.0
V
Turn-on time
ton
0.1
Storage time
tstg
1.0
Switching time
Fall time
tf
IB1 = −IB2 = 6 mA, DUTY CYCLE ≤ 1%
0.2
μs
Marking
D1222
Lot No.
Note 1.
Part No. (or abbreviation code)
VCC ≈ 30 V
20 μs
INPUT
IB1
IB2
OUTPUT
IB2
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.


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