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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ZXTNS618MC Fiches technique(PDF) 6 Page - Diodes Incorporated |
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ZXTNS618MC Fiches technique(HTML) 6 Page - Diodes Incorporated |
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6 / 10 page  ZXTNS618MC Document Number DS31933 Rev. 2 - 2 6 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC Electrical Characteristics, Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 40 100 - V IC = 100µA Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 20 27 - V IC = 10mA Emitter-Base Breakdown Voltage V(BR)EBO 7.5 8.2 - V IE = 100µA Collector Cutoff Current ICBO - - 25 nA VCB = 32V Emitter Cutoff Current IEBO - - 25 nA VEB = 6V Collector Emitter Cutoff Current ICES - - 25 nA VCES = 16V Static Forward Current Transfer Ratio (Note 3) hFE 200 300 200 100 400 450 360 180 - - - - - IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V Collector-Emitter Saturation Voltage (Note 3) VCE(sat) - - - - - 8 90 115 190 210 15 150 135 250 270 mV IC =0.1A, IB = 10mA IC = 1A, IB = 10mA IC = 2A, IB = 50mA IC = 3A, IB = 100mA IC = 4.5A, IB= 125mA Base-Emitter Turn-On Voltage (Note 3) VBE(on) - 0.88 -0.95 V IC = 4.5A, VCE = 2V Base-Emitter Saturation Voltage (Note 3) VBE(sat) - 0.98 -1.05 V IC= 4.5A, IB = -125mA Output Capacitance Cobo - 23 30 pF VCB = 10V. f = 1MHz Transition Frequency fT 100 140 - MHz VCE = 10V, IC = 50mA, f = 100MHz Turn-on Time ton - 170 - ns VCC=10V, IC=3A IB1 = IB2 = 10mA Turn-off Time toff - 400 - ns Electrical Characteristics, Schottky Diode @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 40 60 V IR = -300µA Forward Voltage (Note 3) VF - - - - - - - - 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 - mV IF = 50mA IF = 100mA IF = 250mA IF = 500mA IF = 750mA IF = 1000mA IF = 1500mA IF = 1000mA, TA = 100°C Reverse Current IR - 50 100 µA VR = 30V Diode Capacitance CD - 25 - pF VR = 25V, f = 1MHz Reverse Recovery Time trr - 12 - ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA Notes: 3. Measured under pulsed conditions. |
Numéro de pièce similaire - ZXTNS618MC |
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Description similaire - ZXTNS618MC |
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