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LC35V256ET-70W Fiches technique(PDF) 4 Page - Sanyo Semicon Device |
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LC35V256ET-70W Fiches technique(HTML) 4 Page - Sanyo Semicon Device |
4 / 6 page No. 6303-4/6 LC35V256EM, ET70W DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V Parameter Symbol Conditions Ratings Unit min typ max Input leakage current ILI VIN = 0 to VCC –1.0 +1.0 µA Output leakage current ILO VCE = VIH or VOE = VIH or VWE = VIL –1.0 +1.0 µA VI/O = 0 to VCC Output high-level voltage VOH1 IOH1 = –2.0 mA VCC – 0.4 V VOH2 IOH2 = –100 µA VCC – 0.1 V Output low-level voltage VOL1 IOL1 = 2.0 mA 0.4 V VOL2 IOL2 = 100 µA 0.4 V ICCA2 VCE = VIL, II/O = 0 mA, VIN = VIH or VIL 1.2 mA Operating current drain ICCA3 VCE = VIL, VIN = VIH or VIL min cycle 20 25 mA II/O = 0 mA, DUTY 100 % 1 µs cycle 1.5 2.5 mA Ta ≤ 25°C 0.01 µA Standby mode ICCS1 Ta ≤ 60°C 0.8 µA current drain Ta ≤ 70°C 4.0 µA ICCS2 VCE = VIH, VIN = 0 to VCC 0.4 mA Note: * Reference values when VCC = 3.3 V and Ta = 25°C. CMOS inputs VCE ≥ VCC – 0.2 V, VIN = 0 to VCC VCC – 0.2 V/ 0.2 V inputs CMOS inputs AC Electrical Characteristics at Ta = –10 to +70°C, VCC = 3.0 to 3.6 V AC test conditions Input pulse voltage levels: 0.2 VCC to 0.8 VCC Input rise and fall times: 5 ns Input and output timing levels: 1/2 VCC Output load: 30 pF (including the jig capacitance) Parameter Symbol min max Unit Read cycle time tRC 70 ns Address access time tAA 70 ns CE access time tCA 70 ns OE access time tOA 50 ns Output hold time tOH 10 ns CE output enable time tCOE 10 ns OE output enable time tOOE 5ns CE output disable time tCOD 35 ns OE output disable time tOOD 30 ns Read Cycle Parameter Symbol min max Unit Write cycle time tWC 70 ns Address setup time tAS 0ns Write pulse width tWP 55 ns CE setup time tCW 60 ns Write recovery time tWR 0ns CE write recovery time tWR1 0ns Data setup time tDS 50 ns Data hold time tDH 0ns CE data hold time tDH1 0ns WE output enable time tWOE 5ns WE output disable time tWOD 35 ns Write Cycle |
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