BAT721C datasheet(2/3 Pages) PANJIT

No de pièce	BAT721C

Description	SCHOTTKY BARRIER (DOUBLE) DIODES

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Fabricant	PANJIT [Pan Jit International Inc.]

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PAGE . 2

July 20.2010-REV.01

BAT721C / BAT721S

ELECTRICAL CHARACTERISTICS

PARAM ETER

SYM BO L

C OND ITIO NS

M IN.

M AX.

UNIT

C o nt i nuo us f o r wa r d vo lt a g e

V

F

I

F=10mA

I

F = 100m A

I

F=200mA

-

300

420

550

mV

C o nt i nuo us r e ve r s e c ur r e nt

I

R

V

R = 30V

-

15

μA

V

R = 30V , T J = 100

o C-

3

Diode capacitance

C

d

f= 1 M Hz, V

R= 0

40

50

p F

4. Pulse test : tp<300

μs, δ < 0.02.

Tj=25C unless otherwise specified.

FIG. 1-Reverse Leakage Current vs. Junction Temperature

FIG. 2-Typical Junction Capacitance under Bias

FIG. 3 Typical Forward Voltage

Junction Temperature T , °C

J

Reverse Bias Voltage V , V

R

Forward Voltage V , V

F

10

100

1000

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

10

100

1000

10000

0

20

40

60

80

100

120

140

VR =40V

0

5

10

15

20

25

0

1020304050

Numéro de pièce similaire - BAT721C

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BAT721C	48Kb / 8P	Schottky barrier double diodes 1999 May 06
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Description similaire - BAT721C

Fabricant	No de pièce	Fiches technique	Description
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