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DZT955 Datasheet(Fiches technique) 2 Page - Diodes Incorporated

Numéro de pièce DZT955
Description  LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Télécharger  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZT955 Datasheet(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-180
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-140
V
IC = -10mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
V
IE = -100μA, IC = 0
Collector Cutoff Current
ICBO
-50
-1
nA
μA
VCB = -150V, IE = 0
VCB = -150V, IE = 0,
TA = 100°C
Emitter Cutoff Current
IEBO
-10
nA
VEB = - 6V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
-60
-120
-150
-370
mV
IC = -100mA, IB = -5mA
I
B
C = -500mA, IBB = -50mA
IC = -1A, IB = -100mA
I
B
C = -3A, IBB = -300mA
Base-Emitter Saturation Voltage
VBE(SAT)
-1110
mV
IC = -3A, IB = -300mA
B
Base-Emitter Turn-On Voltage
VBE(ON)
-950
mV
IC = -3A, VCE = -5V
DC Current Gain
hFE
100
100
75
10
300
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -3A, VCE = -5V
IC = -10A, VCE = -5V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
150
MHz
IC = -100mA, VCE = -10V,
f = 100MHz
Output Capacitance
Cobo
40
pF
VCB = -20V, f = 1MHz
SWITCHING CHARACTERISTICS
Switching Times
ton
toff
85
430
ns
IC = -1A, IB1 = -100mA
IB2 = 100mA, VCC = -50V
Notes:
4.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.2
0.4
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
0.6
0.8
1.0
0
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
01
2
3
45
0
0.2
0.4
0.6
0.8
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
DS31280 Rev. 2 - 2
2 of 4
www.diodes.com
DZT955
© Diodes Incorporated


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