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DZT5551-13 Fiches technique(PDF) 1 Page - Diodes Incorporated

No de pièce DZT5551-13
Description  NPN SURFACE MOUNT TRANSISTOR
Download  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZT5551-13 Fiches technique(HTML) 1 Page - Diodes Incorporated

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DS31219 Rev. 2 – 2
1 of 4
www.diodes.com
DZT5551
© Diodes Incorporated
DZT5551
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DZT5401)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 3)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.112 grams (approximate)
2
3
4
1
SOT-223
3
1
2,4
BASE
COLLECTOR
EMITTER
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation @TA = 25°C (Note 3)
PD
1
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
RθJA
125
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
180
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICBO
50
nA
μA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current
IEBO
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
80
80
30
250
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
200
VCE = 10V, IC = 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA, f = 100MHz
Noise Figure
NF
8.0
dB
VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.


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