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DZTA42 Datasheet(Fiches technique) 1 Page - Diodes Incorporated

Numéro de pièce DZTA42
Description  NPN SURFACE MOUNT TRANSISTOR
Télécharger  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZTA42 Datasheet(HTML) 1 Page - Diodes Incorporated

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DS30582 Rev. 5 - 2
1 of 4
www.diodes.com
DZTA42
© Diodes Incorporated
DZTA42
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DZTA92)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation at @TA = 25°C (Note 3)
Pd
1
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
RθJA
125
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
300
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
300
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6
V
IE = 100μA, IC = 0
Collector Cut-Off Current
ICBO
0.1
μA
VCB = 200V, IE = 0
Emitter Cut-Off Current
IEBO
0.1
μA
VEB = 6V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 20mA, IB = 2mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.9
V
IC = 20mA, IB = 2mA
25
IC = 1mA, VCE = 10V
40
IC = 10mA, VCE = 10V
DC Current Gain
hFE
40
IC = 30mA, VCE = 10V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
50
MHz
IC = 10mA, VCE = 20V, f = 100MHz
Output Capacitance
Cobo
3
pF
VCB = 20V, f = 1MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB, 1” x 0.85” x 0.052”; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse Test: Pulse width = 300
μs, Duty Cycle ≤ 2%
SOT-223
TOP VIEW
Schematic and Pin Configuration
3
1
2,4
COLLECTOR
EMITTER
BASE
2
3
4
1
4
3
2
1
C
C
B
E


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