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DZTA92 Datasheet(Fiches technique) 1 Page - Diodes Incorporated

Numéro de pièce DZTA92
Description  PNP SURFACE MOUNT TRANSISTOR
Télécharger  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZTA92 Datasheet(HTML) 1 Page - Diodes Incorporated

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DS30521 Rev. 4 - 2
1 of 4
www.diodes.com
DZTA92
Diodes Incorporated
DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
?
Epitaxial Planar Die Construction
?
Complementary NPN Type Available (DZTA42)
?
Ideally Suited for Automated Assembly Processes
?
Ideal for Medium Power Switching or Amplification Applications
?
Lead Free By Design/RoHS Compliant (Note 1)
?
"Green" Device (Note 2)
Mechanical Data
?
Case: SOT-223
?
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
?
Marking & Type Code Information: See Page 3
?
Ordering Information: See Page 3
?
Weight: 0.115 grams (approximate)
2
3
4
1
SOT-223
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Base Current
IB
-100
mA
Continuous Collector Current
IC
-500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation @ TA = 25C (Note 3)
Pd
1
W
Thermal Resistance, Junction to Ambient @ TA = 25C (Note 3)
R?JA
125
?C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
C
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-300
?
?
V
IC = -100?A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-300
?
?
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
?
?
V
IE = -100?A, IC = 0
Collector-Base Cut-Off Current
ICBO
?
?
-0.25
?A
VCB = -200V, IE = 0
Emitter-Base Cut-Off Current
IEBO
?
?
-0.1
?A
VEB = -3V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
?
?
-0.5
V
IC = -20mA, IB = -2mA
Base-Emitter Saturation Voltage
VBE(SAT)
?
?
-0.9
V
IC = -20mA, IB = -2mA
25
?
?
IC = -1mA, VCE = -10V
40
?
?
IC = -10mA, VCE = -10V
DC Current Gain
hFE
25
?
?
V
IC = -30mA, VCE = -10V
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
fT
50
?
?
MHz
IC = -10mA, VCE = -20V, f = 100MHz
Output Capacitance
Cobo
?
?
6
pF
VCB = -20V, f = 1MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB, 1? x 0.85? x 0.052?; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%


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