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LA7642N Fiches technique(PDF) 4 Page - Sanyo Semicon Device |
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LA7642N Fiches technique(HTML) 4 Page - Sanyo Semicon Device |
4 / 6 page No. 5693-4/6 LA7642N Parameter Symbol Conditions Ratings Unit min typ max Input a signal to which a 63-kHz modulation has been applied to pin 14 and measure the pin 6 R-Y amplitude Vron (V p-p) when pre- De-emphasis 63k R-Y DE63R emphasis is on. Next, turn off preemphasis, –1.0 –2.6 –4.0 dB measure the pin 6 R-Y amplitude Vroff (V p-p), and calculate DE63R from the following formula. DE63R = 20 × log (Vroff/Vron) (dB) Input a signal to which a 250-kHz modulation has been applied to pin 14 and measure the pin 7 B-Y amplitude Vbon (V p-p) when pre- De-emphasis 250k B-Y DE250B emphasis is on. Next, turn off preemphasis, –4.5 –7.0 –9.5 dB measure the pin 7 B-Y amplitude Vboff (V p-p), and calculate DE250B from the following formula. DE250B = 20 × log (Vboff/Vbon) (dB) Input a signal to which a 250-kHz modulation has been applied to pin 14 and measure the pin 6 R-Y amplitude Vron (V p-p) when pre- De-emphasis 250k R-Y DE250R emphasis is on. Next, turn off preemphasis, –6.5 –9.0 –11.5 dB measure the pin 6 R-Y amplitude Vroff (V p-p), and calculate DE250R from the following formula. DE250R = 20 × log (Vroff/Vron) (dB) [Sandcastle Pulse] Apply at least 16 pulses with an amplitude of 0 V to VCC and then take the following V threshold voltage VBLK measurement. Apply a DC voltage to pin 10 1.0 1.3 1.6 V and slowly increase this voltage starting at 0 V. Measure the DC voltage applied to pin at the point the pin 3 DC voltage exceeds 3 V. Apply at least 16 pulses with an amplitude of 0 V to VCC and then take the following measurement. Apply a pulse signal with a 12-µs high period and a 52-µs low period H threshold voltage HBLK (for a 64-µs cycle) and slowly increase the 2.5 3.0 3.5 V amplitude of that signal starting at 0. Measure the wave height of that pulse signal at the point the pin 7 (B-Y) DC voltage exceeds VBYBLK + 100 mV. Apply at least 16 pulses with an amplitude of 0 V to VCC and then take the following measurement. Apply a pulse signal with a 12-µs high period and a 52-µs low period BGP threshold voltage BGP (for a 64-µs cycle) and slowly increase the 4.5 5.0 5.5 V amplitude of that signal starting at 0. Measure the wave height of that pulse signal at the point the pin 4 (IDF) DC voltage becomes higher than it was at the point the pulse signal wave height was 0. [System Switching] Slowly increase the pin 12 DC voltage from SECAM threshold voltage 1 SESWLO 0 V and measure that voltage at the point 1.0 1.3 1.6 V the mode switches to a non-SECAM mode. Slowly increase the pin 12 DC voltage from SECAM threshold voltage 2 SESWHI 3 V and measure that voltage at the point 3.6 3.9 4.3 V the mode switches to SECAM mode. [Killer Output: Pin 13] Killer on output level VKILON Measure the pin 13 voltage when the killer 0.0 0.2 0.5 V circuit is on. Killer off output level VKILOF Measure the pin 13 voltage when the killer 7.3 7.8 7.8 V circuit is off. [Reference Frequency Input Block] Measure the variation in the pin 5 DC voltage 4.00-MHz input level variations 1 V5DS4 when the 4.00-MHz input level is changed –50 0 +50 mV from 200 mV p-p to 100 mV p-p. Continued from preceding page. |
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