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STPS10120CFP Fiches technique(PDF) 2 Page - STMicroelectronics |
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STPS10120CFP Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS10120C 2/8 1 Characteristics When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) To evaluate the maximum conduction losses use the following equation : P = 0.60 x IF(AV) + 0.02 IF 2 (RMS) Table 4. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB Per diode Total 3.8 2.3 ° C/W TO-220FPAB Per diode Total 6.6 5.2 Rth(c) Coupling TO-220AB Total 0.7 TO-220FPAB 3.7 Table 5. Static electrical characteristics (per diode) Symbol Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test : tp = 5 ms, δ < 2% Reverse leakage current Tj = 25° C VR = VRRM 6µA Tj = 125° C 1 3 mA VF (2) 2. Pulse test : tp = 380 µs, δ < 2% Forward voltage drop Tj = 25° C IF = 5 A 0.85 V Tj = 125° C 0.64 0.7 Tj = 25° C IF = 10 A 0.96 Tj = 125° C 0.73 0.8 |
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