STP60NF10 datasheet(4/15 Pages) STMICROELECTRONICS

No de pièce	STP60NF10

Description	N-channel 100V - 0.019廓 - 80A - TO-220 - D2PAK - I2PAK STripFET??II Power MOSFET

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Electrical characteristics

STB60NF10 - STB60NF10 -1 - STP60NF10

4/15

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

100

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

23

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 40A

0.019

0.023

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 25V, ID = 40A

78

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f = 1 MHz,

VGS = 0

4270

470

140

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 50V, ID = 80A

VGS =10V

104

20

32

nC

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Fabricant	No de pièce	Fiches technique	Description
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