N-CHANNEL

POWER MOSFET

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 8699

Issue 1

Page 1 of 3

IRFAG50

In A Hermetic Metal TO3 Package

Motor Control and Amplifier Applications

C = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

1000V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

Tc = 25°C

5.6A

ID

Continuous Drain Current

Tc = 100°C

3.5A

IDM

Pulsed Drain Current

(1)

22A

PD

Total Power Dissipation at

Tc = 25°C

150W

Derate Above 25°C

1.2W/°C

EAS

Single Pulse Avalanche Energy

(2)

860mJ

dv/dt

Peak Diode Recovery

(3)

1.0V/ns

TJ

Junction Temperature Range

-55 to +150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

0.83

°C/W

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Min.

Typ.

Max.

Units

LD

Internal Drain Inductance

5

LS

Internal Source Inductance

13

nH

Notes

Notes

Notes

Notes

(1)

Repetitive Rating: Pulse width limited by maximum junction temperature

(2)

@VDD = 50V, L = 52 mH, Peak IL = 5.6A, Starting TJ = 25°C, RG = 25Ω

(3)

@ ISD ≤ 5.6A, di/dt ≤ 120A/µs, VDD ≤ 600V, TJ ≤ 150°C, Suggested RG = 6.2Ω

(4)

Pulse Width ≤ 300us, δ ≤ 2%