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LA4182 Fiches technique(PDF) 1 Page - Sanyo Semicon Device

No de pièce LA4182
Description  2.3 W 2-Channel AF Power Amplifier
Download  9 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LA4182 Fiches technique(HTML) 1 Page - Sanyo Semicon Device

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2.3 W 2-Channel AF Power Amplifier
Features
.
Built-in 2 channels enabling use in stereo and bridge
amplifier applications.
.
High output: 2.3 W/channel, VCC =9 V, RL =4 Ω, and
4.7 W/bridge, RL =8 Ω.
.
Minimum number of external parts required : 9 pcs. min.
(Stereo/bridge).
.
Small pop noise at the time of power supply ON/OFF due to
built-in muting circuit.
.
Good ripple rejection ratio due to built-in ripple filter.
.
Soft tone at the time of output saturation.
.
Good channel separation.
.
Voltage gain fixed at 45 dB (Bridge: 51 dB). Variable
voltage gain available with external resistor added.
.
Easy to design radiator fin.
Package Dimensions
unit : mm
3022A-DIP12F
[LA4182]
SANYO : DIP12F
Note) In general applications, heat generated in this package
can be radiated through the Cu-foiled area of the printed
circuit board, but since power dissipation Pd may be
increased depending on the supply voltage and load
conditions, it is recommended to use a fin additionally.
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
With signal
11
V
Quiescent
15
V
Allowable power dissipation
Pd max
With printed circuit board
(Refer to Pd-Ta characteristics)
4W
Operating temperature
Topr
−20 to +75
°C
Storage temperature
Tstg
−55 to +150
°C
Recommended Operating Conditions at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC
9V
Load resitance
RL
Stereo
4 to 8
Bridge
8
Ordering number: EN742G
Monolithic Linear IC
LA4182
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
41596HA(II)/O207KI/2146KI/4025KI/O291KI,TS No.742-1/9


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