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2N2880-220M Fiches technique(PDF) 2 Page - Seme LAB

No de pièce 2N2880-220M
Description  NPN POWER SILICON TRANSISTOR
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Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
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2N2880-220M Fiches technique(HTML) 2 Page - Seme LAB

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2N2880-220M
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5550
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector
– Emitter Cut-off Current
Collector
– Base Cut-off Current
Emitter
– Base Cut-off Current
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Base – Emitter Breakdown Voltage
Base – Emitter Saturation Voltage
Collector – Emitter Saturation Voltage
DC Current Gain
High Frequency Forward Current Gain
Open Circuit Output Capacitance
Rise Time
Storage Time
Fall Time
VCE = 50V
IB = 0
VCE = 80V
IE = 0
VEB = 4V
IC = 0
IC = 100mA
IC = 10µA
IE = 10µA
IC = 1.0A
IB = 0.1A
IC = 1.0A
IB = 0.1A
IC = 5.0A
IB = 0.5A
IC = 1.0A
VCE = 5V
IC = 0.5A
VCE = 5V
IC = 1.0A
VCE = 10V
f = 10MHz
f = 1MHz
VCB = 10V
IC = 1.0A
VCC = 20V
IB1= 100mA
100
0.2
0.2
80
100
8.0
1.2
0.25
2.0
40
120
15
3.0
150
0.3
2.0
0.35
µA
V
pF
µs
ICEO
ICBO
IEBO
V(BR)CEO
V(BR)CEO
V(BR)EBO
VBE(sat)
VCE(sat)
hFE
hfe
Cobo
tr
ts
tf
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed : Pulse duration
≤ 300 µs , duty cycle ≤ 2.0%


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