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IPP048N12N3G Fiches technique(PDF) 2 Page - Infineon Technologies AG

No de pièce IPP048N12N3G
Description  OptiMOS?? Power-Transistor
Download  9 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP048N12N3G Fiches technique(HTML) 2 Page - Infineon Technologies AG

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IPP048N12N3 G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
0.5
K/W
Thermal resistance,
R thJA
minimal footprint
-
-
62
junction - ambient
6 cm
2 cooling area5)
--
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
120
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=230 µA
234
Zero gate voltage drain current
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
-
0.1
1
µA
V DS=120 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=100 A
-
4.1
4.8
m
Gate resistance
R G
-
1.8
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
81
162
-
S
1)J-STD20 and JESD22
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
4) T
jmax=150 °C and duty cycle D=0.01 for Vgs<-5V
2) Current is limited by bondwire; with anR
thJC=0.5 K/W the chip is able to carry 161 A.
3) See figure 3
Rev. 2.1
page 2
2010-07-01


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