1N5711 and 1N6263

SCHOTTKY BARRIER DIODES

FEATURES :

• For general purpose applications

• Metal-on-silicon Schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices, steering, biasing and coupling diodes for

fast switching and low logic level applications.

• This diode is also available in the MiniMELF case with

type designation LL5711 and LL6263.

• Pb / RoHS Free

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Symbol

Value

Unit

1N5711

70

1N6263

60

Power Dissipation (Infinite Heatsink)

400

(1)

mW

Maximum Single Cycle Surge 10

µs Square Wave

2

A

Thermal Resistance Junction to Ambient Air

0.3

(1)

°C/mW

Junction Temperature

125

(1)

°C

Storage temperature range

-55 to + 150

(1)

°C

Parameter

Symbol

Min

Typ

Max

Unit

1N5711

70

-

-

1N6263

60

-

-

Reverse Current

-

-

200

nA

-

-

0.41

-

-

1.0

1N5711

-

-

2.0

1N6263

-

-

2.2

Note:

(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..

Page 1 of 2

Rev. 02 : March 24, 2005

Parameter

Repetitive Peak Reverse Voltage

V

Reverse Breakdown Voltage

Forward Voltage Drop

V

V

Test Condition

-

-

Diode Capacitance

Reverse Recovery Time

Cd

Trr

pF

ns

1

DO - 35 Glass

(DO-204AH)

0.079(2.0 )max.

0.150 (3.8)

max.

0.020 (0.52)max.

Dimensions in inches and ( millimeters )

1.00 (25.4)

min.

1.00 (25.4)

min.

Cathode

Mark