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LA1193M Fiches technique(PDF) 8 Page - Sanyo Semicon Device

No de pièce LA1193M
Description  High-Performance FM Front End for Car Radios
Download  21 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LA1193M Fiches technique(HTML) 8 Page - Sanyo Semicon Device

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1. Oscillator Circuit
Steps were taken to prevent AMR degradation during earlier product type
AGC operation, since the local oscillator block in this IC has independent
Vd (pin 5) and ground (pin 3) connections.
This is a Colpitts oscillator and has the same structure as that used in
earlier circuits. The oscillation level and intensity are changed by
capacitors C2-4, C4 and CP.
2. Local Oscillator Buffer Output
This buffer is an emitter follower circuit.
If desired, the buffer efficiency can be increased by inserting a resistor
between pin 1 and ground to pass more current through the buffer
transistor. However, this current must be limited so that Pdmax for the
package is not exceeded.
3. Interference Characteristics
The LA1193M incorporates a newly developed 3D-AGC (triple dimension) circuit. This circuit allows three-signal
interference characteristics (inter-modulation characteristics) and two-signal sensitivity suppression characteristics to
be provided at the same time, a combination of characteristics previously thought difficult to achieve.
• Inter-Modulation Characteristics
The LA1193M prevents inter-modulation distortion by applying two wide-band AGC circuits.
No. 4715-8/21
LA1193M, 1193V
Figure 1


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