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LA1193M Fiches technique(PDF) 8 Page - Sanyo Semicon Device |
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LA1193M Fiches technique(HTML) 8 Page - Sanyo Semicon Device |
8 / 21 page 1. Oscillator Circuit Steps were taken to prevent AMR degradation during earlier product type AGC operation, since the local oscillator block in this IC has independent Vd (pin 5) and ground (pin 3) connections. This is a Colpitts oscillator and has the same structure as that used in earlier circuits. The oscillation level and intensity are changed by capacitors C2-4, C4 and CP. 2. Local Oscillator Buffer Output This buffer is an emitter follower circuit. If desired, the buffer efficiency can be increased by inserting a resistor between pin 1 and ground to pass more current through the buffer transistor. However, this current must be limited so that Pdmax for the package is not exceeded. 3. Interference Characteristics The LA1193M incorporates a newly developed 3D-AGC (triple dimension) circuit. This circuit allows three-signal interference characteristics (inter-modulation characteristics) and two-signal sensitivity suppression characteristics to be provided at the same time, a combination of characteristics previously thought difficult to achieve. • Inter-Modulation Characteristics The LA1193M prevents inter-modulation distortion by applying two wide-band AGC circuits. No. 4715-8/21 LA1193M, 1193V Figure 1 |
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