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Z0107MN0,135 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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Z0107MN0,135 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 16 page Z0107MN0 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 — 3 January 2011 3 of 16 NXP Semiconductors Z0107MN0 4Q Triac 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 600 V IT(RMS) RMS on-state current full sine wave; Tsp ≤ 103 °C; see Figure 3; see Figure 1; see Figure 2 -1 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) =25°C; tp = 20 ms; see Figure 4; see Figure 5 - 12.5 A full sine wave; Tj(init) =25°C; tp = 16.7 ms - 13.8 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 0.78 A2s dIT/dt rate of rise of on-state current IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2+ G+ -50 A/µs IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2+ G- -50 A/µs IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2- G- -50 A/µs IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2- G+ -20 A/µs IGM peak gate current - 1 A PGM peak gate power - 2 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C Fig 1. RMS on-state current as a function of surge duration; maximum values Fig 2. RMS on-state current as a function of solder point temperature; maximum values 003aac269 0 2 4 6 8 10 -2 10 -1 1 10 surge duration (s) IT(RMS) (A) 003aac270 0 0.4 0.8 1.2 -50 0 50 100 150 Tsp ( °C) IT(RMS) (A) |
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